FDS8935 查看數據表（PDF） - Fairchild Semiconductor
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FDS8935 Datasheet PDF : 6 Pages
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Typical Characteristics TJ = 25 °C unless otherwise noted
10
ID = -2.1 A
8
6
4
VDD = -20 V
VDD = -40 V
VDD = -60 V
1000
100
Ciss
Coss
2
0
0
3
6
9
12
15
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
2.2
2.0
TJ = 25 oC
1.8
1.6
TJ = 100 oC
1.4
TJ = 125 oC
1.2
1.0
0.1
1
10
tAV, TIME IN AVALANCHE (ms)
Figure 9. Unclamped Inductive
Switching Capability
f = 1 MHz
Crss
VGS = 0 V
10
0.1
1
10
100
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
2.5
2.0
VGS = -10 V
1.5
VGS = -4.5 V
1.0
Limited by package
0.5
RθJA = 78 oC/W
0.0
25
50
75
100
125
150
TA, Ambient TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Ambient Temperature
20
10
100 us
1 ms
1
THIS AREA IS
0.1 LIMITED BY rDS(on)
SINGLE PULSE
TJ = MAX RATED
RθJA = 135 oC/W
0.01
TA = 25 oC
0.005
0.1
1
10
10 ms
100 ms
1s
10 s
DC
100 300
-VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
1000
100
VGS = -10 V
SINGLE PULSE
RθJA = 135 oC/W
TA = 25 oC
10
1
0.5
10-4 10-3 10-2 10-1
1
10 100
t, PULSE WIDTH (s)
Figure 12. Single Pulse Maximum
Power Dissipation
1000
©2010 Fairchild Semiconductor Corporation
4
FDS8935 Rev.C
www.fairchildsemi.com
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