FDS8670(2005) 查看數據表（PDF） - Fairchild Semiconductor
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FDS8670 Datasheet PDF : 5 Pages
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Typical Characteristics (continued)
10
ID = 21A
8
6
4
VDS = 10V
20V
15V
2
0
0
10
20
30
40
50
60
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
1000
100
RDS(ON) LIMIT
10
1
VGS = 10V
SINGLE PULSE
0.1
RθJA = 125oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
5000
4000
3000
f = 1MHz
VGS = 0 V
Ciss
2000
1000
Crss
Coss
0
0
5
10
15
20
25
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
100
SINGLE PULSE
RθJA = 125°C/W
80
TA = 25°C
60
40
20
0
0.001
0.01
0.1
1
10
t1, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
RθJA(t) = r(t) * RθJA
RθJA = 125 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS8670 Rev C (W)
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