FDT434 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FDT434 Datasheet PDF : 5 Pages
| |||
Typical Characteristics
20
VGS = -4.5V
16
-3.0V
-2.5V
12
8
-2.0V
4
-1.5 V
0
0
1
2
3
4
5
-VDS, DRAIN-SOURCE VOLTAGE (V)
1.8
1.6
1.4
VGS = -2.5V
-3.0V
1.2
-3.5V
1
-4.0V
-4.5V
0.8
0
5
10
15
20
- ID, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
1.6
ID = - 6 A
1.4 VGS = - 4.5V
1.2
1
0.8
0.6
-50 -25
0
25
50
75
100 125 150
TJ , JUNCTION TEMPERATURE (°C)
Figure 3. On-Resistance Variation
withTemperature.
15
VDS = -5V
12
9
TJ = -55°C
25°C
125°C
6
3
0
0.9
1.2
1.5
1.8
2.1
2.4
2.7
-VGS , GATE TO SOURCE VOLTAGE (V)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.15
0.12
I D = -6 A
0.09
0.06
0.03
TA =125°C
25°C
0
1
2
3
4
5
- V GS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
VGS= 0V
1
0.1
TJ = 125°C
25°C
-55°C
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
-VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
©2011 Fairchild Semiconductor Corporation
3
FDT434P Rev. C2
www.fairchildsemi.com
Share Link: 