2503NZ 查看數據表（PDF） - Fairchild Semiconductor
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2503NZ Datasheet PDF : 5 Pages
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October 2001
FDW2503NZ
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged
gate version of Fairchild Semiconductor’s advanced
PowerTrench process. It has been optimized for power
management applications with a wide range of gate
drive voltage (2.5V – 12V).
Applications
• Load switch
• Motor drive
• DC/DC conversion
• Power management
Features
• 5.5 A, 20 V. RDS(ON) = 20 mΩ @ VGS = 4.5V
RDS(ON) = 26 mΩ @ VGS = 2.5V
• Extended VGSS range (±12V) for battery applications
• ESD protection diode (note 3)
• High performance trench technology for extremely
low RDS(ON)
• Low profile TSSOP-8 package
1
8
2
7
3
6
4
5
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
VDSS
V GSS
ID
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current – Continuous
– Pulsed
(Note 1a)
PD
Power Dissipation
(Note 1a)
(Note 1b)
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
2503NZ
FDW2503NZ
13’’
©2001 Fairchild Semiconductor Corporation
Ratings
20
±12
5.5
30
1.0
0.6
–55 to +150
100
125
Units
V
V
A
W
°C
°C/W
Tape width
12mm
Quantity
3000 units
FDW2503NZ Rev C(W)
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