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FDT461N 查看數據表(PDF) - Fairchild Semiconductor

零件编号
产品描述 (功能)
生产厂家
FDT461N
Fairchild
Fairchild Semiconductor Fairchild
FDT461N Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
PSPICE Electrical Model
.SUBCKT FDT461N 2 1 3 ; rev January 2004
Ca 12 8 1.5e-10
Cb 15 14 1.1e-10
Cin 6 8 7.0e-11
Dbody 7 5 DbodyMOD
Dbreak 5 11 DbreakMOD
Dplcap 10 5 DplcapMOD
Ebreak 11 7 17 18 109.7
DPLCAP 5
10
RSLC2
RSLC1
51
5
51
ESLC
DBREAK
11
LDRAIN
DRAIN
2
RLDRAIN
Eds 14 8 5 8 1
Egs 13 8 6 8 1
Esg 6 10 6 8 1
Evthres 6 21 19 8 1
Evtemp 20 6 18 22 1
It 8 17 1
Lgate 1 9 5.29e-9
Ldrain 2 5 1.0e-9
Lsource 3 7 5.71e-9
RLgate 1 9 52.9
RLdrain 2 5 10
RLsource 3 7 57.1
GATE
1
LGATE
RLGATE
-
ESG
6
8
+
EVTHRES
+ 19 -
EVTEMP
8
RGATE + 18 - 6
9
20 22
CIN
S1A
12 13
8
S2A
14
15
13
50
RDRAIN
16
21
+
17
EBREAK 18
-
MWEAK
DBODY
MMED
MSTRO
8
7
RSOURCE
LSOURCE
SOURCE
3
RLSOURCE
RBREAK
17
18
Mmed 16 6 8 8 MmedMOD
Mstro 16 6 8 8 MstroMOD
Mweak 16 21 8 8 MweakMOD
Rbreak 17 18 RbreakMOD 1
Rdrain 50 16 RdrainMOD 0.9
Rgate 9 20 3.94
RSLC1 5 51 RSLCMOD 1e-6
RSLC2 5 50 1e3
Rsource 8 7 RsourceMOD 0.5
Rvthres 22 8 RvthresMOD 1
Rvtemp 18 19 RvtempMOD 1
S1a 6 12 13 8 S1AMOD
S1b 13 12 13 8 S1BMOD
S2a 6 15 14 13 S2AMOD
S2b 13 15 14 13 S2BMOD
S1B
S2B
CA
13
CB
+
+ 14
EGS
6
8
-
EDS
5
8
-
RVTEMP
19
IT
-
VBAT
+
8
22
RVTHRES
Vbat 22 19 DC 1
ESLC 51 50 VALUE={(V(5,51)/ABS(V(5,51)))*(PWR(V(5,51)/(1e-6*15),2.5))}
.MODEL DbodyMOD D (IS=6.4E-11 RS=8.0e-3 IKF=0.9 TRS1=2.5e-3 TRS2=9.5e-6
+ CJO=2.2e-11 M=0.52 TT=2.9e-8 XTI=0.1)
.MODEL DbreakMOD D (RS=0.6 TRS1=1.4e-3 TRS2=-5.0e-5)
.MODEL DplcapMOD D (CJO=3.9e-11 IS=1e-30 N=10 M=0.67)
.MODEL MmedMOD NMOS (VTO=1.75 KP=1.2 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=3.94 T_ABS=25)
.MODEL MstroMOD NMOS (VTO=2.03 KP=12 IS=1e-30 N=10 TOX=1 L=1u W=1u T_ABS=25)
.MODEL MweakMOD NMOS (VTO=1.46 KP=0.02 IS=1e-30 N=10 TOX=1 L=1u W=1u RG=39.4 RS=0.1 T_ABS=25)
.MODEL RbreakMOD RES (TC1=1.0e-3 TC2=-8.8e-7)
.MODEL RdrainMOD RES (TC1=7.0e-3 TC2=2.0e-5)
.MODEL RSLCMOD RES (TC1=1.0e-3 TC2=9.0e-6)
.MODEL RsourceMOD RES (TC1=4.8e-3 TC2=1.0e-6)
.MODEL RvthresMOD RES (TC1=-9.0e-4 TC2=-7.0e-6)
.MODEL RvtempMOD RES (TC1=-2.1e-3 TC2=1.8e-6)
MODEL S1AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-5.0 VOFF=-2.0)
.MODEL S1BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-2.0 VOFF=-5.0)
.MODEL S2AMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=-0.4 VOFF=0.3)
.MODEL S2BMOD VSWITCH (RON=1e-5 ROFF=0.1 VON=0.3 VOFF=-0.4)
.ENDS
Note: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; IEEE Power Electronics Specialist Conference Records, 1991, written by William J. Hepp and C. Frank
Wheatley.
©2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1

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