FGP7N60RUFD 查看數據表（PDF） - Fairchild Semiconductor
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FGP7N60RUFD Datasheet PDF : 9 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Capacitance Characteristics
Temperature at Variant Current Level
1000
800
Ciss
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
600
Figure 8. Turn-On Characteristics vs. Gate
Resistance
Ton
100
Tr
400
Coss
Crss
200
0
1
10
Collector-Emitter Voltage, VCE [V]
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
1000
Common Emitter
VCC = 300V, VGE = +/-15V
IC = 7A
Tc = 25oC
Tc = 125oC
Toff
Tf
Toff
Tf
100
10
100
Gate Resistance, RG [Ω ]
Figure 11. Turn-On Characteristics vs.
Collector Current
200
Common Emitter
150 VGE = +/-15V, RG=30Ω
IC = 7A
Tc = 25oC
100 Tc = 125oC
Ton
Tr
50
Com m on Em itter
VCC = 300V, VGE = +/-15V
IC = 7A
T c = 25oC
T c = 125oC
10
10
100
G ate R esistance, R G [Ω ]
Figure 10. Switching Loss vs. Gate Resistance
600
500
400
300
C om m on E m itter
VCC = 300V, VGE = +/-15V
IC = 7A
T c = 25oC
T c = 125oC
200
Eon
E o ff
Eon
100
E o ff
10
100
G ate R esistance, R G [Ω ]
Figure 12. Turn-Off Characteristics vs.
Collector Current
1000
800
600
Com m on Em itter
VGE = +/-15V, RG=30Ω
IC = 7A
Tc = 25oC
Tc = 125oC
Toff
400
Tf
Toff
200
Tf
4
6
8
10
12
14
Collector Current, IC [A]
4
6
8
10
12
14
Collector C urrent, IC [A]
5
FGP7N60RUFD Rev. A
www.fairchildsemi.com
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