FGH60N60UFD 查看數據表（PDF） - Fairchild Semiconductor

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FGH60N60UFD

600V, 60A Field Stop IGBT

Fairchild Semiconductor 

FGH60N60UFD

600V, 60A Field Stop IGBT

Features

• High current capability

• Low saturation voltage: VCE(sat) = 1.9V @ IC = 60A

• High input impedance

• Fast switching

• RoHS compliant

Applications

• Induction Heating, UPS, SMPS, PFC

August 2008

tm

General Description

Using Novel Field Stop IGBT Technology, Fairchild’s new series

of Field Stop IGBTs offer the optimum performance for Induction

Heating, UPS, SMPS and PFC applications where low conduc

tion and switching losses are essential.

E

C

G

COLLECTOR

(FLANGE)

Absolute Maximum Ratings

Symbol

VCES

VGES

IC

ICM (1)

PD

TJ

Tstg

TL

Description

Collector to Emitter Voltage

Gate to Emitter Voltage

Collector Current

Collector Current

Pulsed Collector Current

Maximum Power Dissipation

Maximum Power Dissipation

Operating Junction Temperature

@ TC = 25oC

@ TC = 100oC

@ TC = 25oC

@ TC = 25oC

@ TC = 100oC

Storage Temperature Range

Maximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds

Notes:

1: Repetitive test , Pulse width limited by max. junction temperature

Thermal Characteristics

Symbol

RθJC(IGBT)

RθJC(Diode)

RθJA

Parameter

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Ambient

C

G

E

Ratings

600

± 20

120

60

180

298

119

-55 to +150

-55 to +150

300

Typ.

-

-

-

Max.

0.33

1.1

40

Units

V

V

A

A

A

W

W

oC

oC

oC

Units

oC/W

oC/W

oC/W

©2008 Fairchild Semiconductor Corporation

1

FGH60N60UFD Rev. A

www.fairchildsemi.com

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