FGH60N60UFD 查看數據表（PDF） - Fairchild Semiconductor
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FGH60N60UFD Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 7. Saturation Voltage vs. VGE
20
Common Emitter
TC = 25oC
16
Figure 8. Saturation Voltage vs. VGE
20
Common Emitter
TC = 125oC
16
12
12
8
60A
120A
4
IC = 30A
0
0
3
6
9
12 15 18
Gate-Emitter Voltage, VGE [V]
8
120A
4
60A
IC = 30A
0
0
3
6
9
12 15 18
Gate-Emitter Voltage, VGE [V]
Figure 9. Capacitance Characteristics
6000
4000
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
Cies
Figure 10. Gate charge Characteristics
15
Common Emitter
TC = 25oC
12
VCC = 100V
9
300V
200V
Coes
6
2000
Cres
0
1
10
30
Collector-Emitter Voltage, VCE [V]
3
0
0
50
100
150
200
Gate Charge, Qg [nC]
Figure 11. SOA Characteristics
500
100
10
10µs
100µs
1ms
Figure 12. Turn off Switching SOA Characteristics
300
100
10 ms
1
DC
Single Nonrepetitive
0.1 Pulse TC = 25oC
Curves must be derated
linearly with increase
in temperature
0.01
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
10
Safe Operating Area
VGE = 15V, TC = 125oC
1
1
10
100
Collector-Emitter Voltage, VCE [V]
1000
FGH60N60UFD Rev. A
5
www.fairchildsemi.com
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