FGH40N60SFTU 查看數據表（PDF） - Fairchild Semiconductor
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FGH40N60SFTU Datasheet PDF : 8 Pages
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FGH40N60SF
600V, 40A Field Stop IGBT
Features
• High current capability
• Low saturation voltage: VCE(sat) =2.3V @ IC = 40A
• High input impedance
• Fast switching
• RoHS compliant
Applications
• Inverter, UPS, SMPS, PFC
March 2009
tm
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new ses-
ries of Field Stop IGBTs offer the optimum performance for
Inverter, UPS, SMPS and PFC applications where low conduc-
tion and switching losses are essential.
E
C
G
COLLECTOR
(FLANGE)
Absolute Maximum Ratings
Symbol
VCES
VGES
IC
ICM (1)
PD
TJ
Tstg
TL
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ TC = 25oC
@ TC = 100oC
@ TC = 25oC
@ TC = 25oC
@ TC = 100oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
RθJC(IGBT)
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Ratings
600
± 20
80
40
120
290
116
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.43
40
Units
V
V
A
A
A
W
W
oC
oC
oC
Units
oC/W
oC/W
©2008 Fairchild Semiconductor Corporation
1
FGH40N60SF Rev.A
www.fairchildsemi.com
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