FGH40N60SFDTU 查看數據表（PDF） - Fairchild Semiconductor

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FGH40N60SFDTU

600V, 40A Field Stop IGBT

Fairchild Semiconductor 

Electrical Characteristics of the Diode TC = 25°C unless otherwise noted

Symbol

Parameter

Test Conditions

VFM

Diode Forward Voltage

IF = 20A

TC = 25oC

TC = 125oC

trr

Qrr

Diode Reverse Recovery Time

IES =20A, dIES/dt = 200A/µs

Diode Reverse Recovery Charge

TC = 25oC

TC = 125oC

TC = 25oC

TC = 125oC

Min.

-

-

-

-

-

-

Typ.

1.95

1.85

45

140

75

375

Max

2.6

-

-

-

-

-

Units

V

ns

nC

FGH40N60SFD Rev.C

3

www.fairchildsemi.com

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