VG26S17400ET-6 查看數據表（PDF） - Vanguard International Semiconductor

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VG26S17400ET-6

4,194,304 x 4 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor  

VIS

Absolute Maximum Rating

Parameter

Voltage on any pin relative to Vss

Supply voltage relative to Vss

Short circuit output current

Power dissipation

Operating temperature

Storage temperature

5V

3.3V

5V

3.3V

Symbol

VT

Vcc

IOUT

PD

TOPT

TSTG

VG26(V)(S)17400E

4,194,304 x 4 - Bit

CMOS Dynamic RAM

Value

Unit

-1.0 to + 7.0

V

-0.5 to + 4.6

-1.0 to + 7.0

V

-0.5 to + 4.6

50

mA

1.0

W

0 to + 70

°C

-55 to + 125

°C

Recommended DC Operating Conditions

Parameter/Condition

Symbol

5 Volt Version

3.3 Volt Version

Unit

Min Typ

Max

Min Typ

Max

Supply Voltage

Vcc

4.5 5.0

5.5

3.0 3.3

3.6

V

Input High Voltage, all inputs

VIH

2.4

- VCC + 1.0 2.0

- VCC + 0.3

V

Input Low Voltage, all inputs

VIL

-1.0 -

0.8

-0.3 -

0.8

V

Capacitance

Ta = 25°C, VCC = 5V±10% or 3.3V±10 %, f = 1MHz

Parameter

Symbol

Typ

Max

Input capacitance (Address)

Cl1

-

5

Input capacitance

(RAS, CAS, OE, WE)

Cl2

-

7

Output capacitance

(Data - in, Data - out)

CI/O

-

7

Note : 1. Capacitance measured with effective capacitance measuring method.

2. CAS = VIH to disable Dout.

Unit

Note

pF

1

pF

1

pF

1,2

Document : 1G5-0142

Rev.1

Page 5

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