VG26S17400ET-6 查看數據表（PDF） - Vanguard International Semiconductor

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VG26S17400ET-6

4,194,304 x 4 - Bit CMOS Dynamic RAM

Vanguard International Semiconductor  

VIS

VG26(V)(S)17400E

4,194,304 x 4 - Bit

CMOS Dynamic RAM

DC Characteristics ; 5 - Volt Version (cont.)

(Ta = 0 to 70°C, VCC = + 5V±10%, Vss = 0V)

Parameter

Symbol

Test Conditions

VG26 (V) (S) 17400E

-5

-6

Min Max Min Max Unit Notes

lnput leakage

current

ILI 0V ≤ Vin ≤ VCC + 0.5V

-5 5 -5 5 µA

Output leakage

current

ILO 0V ≤ Vout ≤ VCC + 0.5V

Dout = Disable

-5 5 -5 5 µA

Output high

voltage

VOH lOH = -5mA

2.4

- 2.4

-V

Output low

voltage

VOL lOL = + 4.2mA

- 0.4 - 0.4 V

Notes :

1. lCC is specified as an average current. It depends on output loading condition and cycle rate when

the device is selected. lCC max is specified at the output open condition.

2. Address can be changed once or less while RAS = VIL.

3. For lCC4, address can be changed once or less within one Fast page mode cycle time.

Document : 1G5-0142

Rev.1

Page 7

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