FJV3111R 查看數據表（PDF） - Fairchild Semiconductor

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FJV3111R

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

FJV3111R

Switching Application (Bias Resistor Built In)

• Switching circuit, Inverter, Interface circuit, Driver Circuit

• Built in bias Resistor (R=22KΩ)

• Complement to FJV4111R

Marking

R31

3

2

1 SOT-23

1. Base 2. Emitter 3. Collector

Equivalent Circuit

C

R

B

NPN Epitaxial Silicon Transistor

Absolute Maximum Ratings Ta=25°C unless otherwise noted

Symbol

Parameter

VCBO

VCEO

VEBO

IC

PC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature

Electrical Characteristics Ta=25°C unless otherwise noted

Symbol

Parameter

Test Condition

BVCBO

BVCEO

ICBO

hFE

VCE (sat)

Cob

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Collector Cut-off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Output Capacitance

IC=100µA, IE=0

IE=1mA, IB=0

VCB=30V, IE=0

VCE=5V, IC=1mA

IC=10mA, IB=1mA

VCB=10V, IE=0

f=1MHz

fT

Current Gain Bandwidth Product

VCE=10V, IC=5mA

R

Input Resistor

Value

40

40

5

100

200

150

-55 ~ 150

E

Units

V

V

V

mA

mW

°C

°C

Min.

40

40

100

15

Typ.

3.7

250

22

Max.

0.1

600

0.3

Units

V

V

µA

V

pF

MHz

29

KΩ

©2002 Fairchild Semiconductor Corporation

Rev. A, August 2002

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