FLC167WF 查看數據表（PDF） - Fujitsu
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FLC167WF Datasheet PDF : 4 Pages
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FLC167WF
C-Band Power GaAs FET
POWER DERATING CURVE
10
DRAIN CURRENT
vs. DRAIN-SOURCE VOLTAGE
8
600
VGS =0V
6
-0.5V
400
4
-1.0V
2
200
-1.5V
-2.0V
0 50 100 150 200
Case Temperature (°C)
0 2 4 6 8 10
Drain-Source Voltage (V)
OUTPUT POWER
& IM3 vs. INPUT POWER
VDS=10V
27 f1 = 6.0 GHz
25
f2 = 6.01GHz
2-tone Test
-10
23
Pout
21
19
-20
-30
IM3
-40
17
-50
10 12 14 16 18
Input Power (S.C.L.) (dBm)
S.C.L.: Single Carrier Level
OUTPUT POWER vs. INPUT POWER
VDS=10V
32 IDS ≈ 0.6 IDSS
30
Pout
28
26
24
22
20
4 GHz
6 GHz
50
4 GHz
40
6 GHz 30
20
ηadd
10
14 16 18 20 22 24
Input Power (dBm)
P1dB & ηadd vs. VDS
f=6GHz
IDS ≈ 0.6 IDSS
32
50
P1dB
31
40
ηadd
30
30
8 9 10
Drain-Source Voltage (V)
2
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