FM1608B-SG 查看數據表（PDF） - Ramtron International Corporation
零件编号
产品描述 (功能)
生产厂家
FM1608B-SG Datasheet PDF : 11 Pages
| |||
A second design consideration relates to the level of
VDD during operation. Battery-backed SRAMs are
forced to monitor VDD in order to switch to battery
backup. They typically block user access below a
certain VDD level in order to prevent loading the
battery with current demand from an active SRAM.
The user can be abruptly cut off from access to the
nonvolatile memory in a power down situation with
no warning or indication.
F-RAM memories do not need this system overhead.
The memory will not block access at any VDD level
that complies with the specified operating range. The
user should take measures to prevent the processor
from accessing memory when VDD is out-of-
tolerance. The common design practice of holding a
processor in reset during powerdown may be
sufficient. It is recommended that Chip Enable is
pulled high and allowed to track VDD during powerup
and powerdown cycles. It is the user’s responsibility
to ensure that chip enable is high to prevent accesses
FM1608B – 64Kb Bytewide 5V F-RAM
below VDD min. (4.5V). Figure 3 shows a pullup
resistor on /CE which will keep the pin high during
power cycles assuming the MCU/MPU pin tri-states
during the reset condition. The pullup resistor value
should be chosen to ensure the /CE pin tracks VDD yet
a high enough value that the current drawn when /CE
is low is not an issue.
MCU/
MPU
VDD
R
FM1608B
CE
WE
OE
A(12:0)
DQ
Figure 3. Use of Pullup Resistor on /CE
Rev. 1.2
Mar. 2011
Page 5 of 11
Share Link: 