FM1808B 查看數據表（PDF） - Cypress Semiconductor
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FM1808B Datasheet PDF : 12 Pages
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FM1808B – 256Kb Bytewide 5V F-RAM
Read Cycle AC Parameters (TA = -40 C to + 85 C, VDD = 4.5V to 5.5V, unless otherwise specified)
Symbol Parameter
Min Max Units Notes
tCE
Chip Enable Access Time (to data valid)
70
ns
tCA
Chip Enable Active Time
70
ns
tRC
Read Cycle Time
130
ns
tPC
Precharge Time
60
ns
tAS
Address Setup Time
0
ns
tAH
Address Hold Time
15
ns
tOE
Output Enable Access Time
12
ns
tHZ
Chip Enable to Output High-Z
15
ns
1
tOHZ
Output Enable to Output High-Z
15
ns
1
Write Cycle AC Parameters (TA = -40 C to + 85 C, VDD = 4.5V to 5.5V unless otherwise specified)
Symbol Parameter
Min Max Units Notes
tCA
Chip Enable Active Time
70
ns
tCW
Chip Enable to Write High
70
ns
tWC
Write Cycle Time
130
ns
tPC
Precharge Time
60
ns
tAS
Address Setup Time
0
ns
tAH
Address Hold Time
15
ns
tWP
Write Enable Pulse Width
40
ns
tDS
Data Setup
30
ns
tDH
Data Hold
0
ns
tWZ
Write Enable Low to Output High Z
15
ns
1
tWX
Write Enable High to Output Driven
10
ns
1
tHZ
Chip Enable to Output High-Z
15
ns
1
tWS
Write Enable Setup
0
ns
2
tWH
Write Enable Hold
0
ns
2
Notes
1 This parameter is periodically sampled and not 100% tested.
2 The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. There is no timing
specification associated with this relationship.
Data Retention
Symbol Parameter
TDR
@ +85ºC
@ +80ºC
@ +75ºC
Min
Max
Units
Notes
10
-
Years
19
-
Years
38
-
Years
Document Number: 001-86209 Rev. **
Page 7 of 12
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