FM25C160UE 查看數據表（PDF） - Fairchild Semiconductor
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FM25C160UE Datasheet PDF : 11 Pages
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Bit0 (/RDY) indicates the Busy/Ready status of the EEPROM.
This bit is a read-only bit and is read by executing RDSR
instruction. If this bit is “1” then the EEPROM is busy doing a
program cycle. If this bit is “0” then the EEPROM is ready.
Note that if a RDSR instruction is executed when an internal
programming cycle is in progress, only the /RDY bit is valid.
All other bits are don’t cares.
The RDSR command requires the following sequence. The /CS
pin is pulled low to select the EEPROM and then the RDSR
opcode is transmitted on the SI pin. After this is done, data on the
SI pin becomes don’t care. The data from the Status Register is
then shifted out on the SO pin starting with D7 bit first and D0 last.
See Figure 6.
FIGURE 6. Read Status Register
/CS
SI
RDSR
OP-CODE
SO
RDSR DATA
WRITE ENABLE (WREN):
When VCC is applied to the EEPROM, it “powers up” in a write-
disabled state. Therefore, all programming modes (Write to memory
array and Status register), must be preceded by a WRITE EN-
ABLE (WREN) instruction. See Figure 7.
FIGURE 7. Write Enable
/CS
SI
WREN Op-Code
SO
WRITE DISABLE (WRDI):
Executing this instruction disables all programming modes (Write
to memory array and Status register), preventing the EEPROM
from accidental writes. Once WRDI instruction is executed,
WREN instruction should be executed to re-enable all program-
ming modes. See Figure 8.
FIGURE 8. Write Disable
/CS
SI
WRDI Op-Code
SO
WRITE SEQUENCE (WRITE):
Write to the array is enabled only when /WP pin is held high and
the EEPROM is write enabled previously (via WREN instruction).
Also, the address of the memory location(s) to be programmed
must be outside the protected address field selected by the Block
Write Protection Level. See Table 4.
TABLE 4. Block Write Protection Levels
Level
0
Status Register Bits
BP1
0
BP0
0
Array
Address
Protected
None
1
0
1
600-7FF
2
1
0
400-7FF
3
1
1
000-7FF
A WRITE command requires the following sequence. The /CS pin
is pulled llow to select the EEPROM, then the WRITE opcode is
transmitted on the SI pin followed by two bytes of address, "High
byte addr" (A15-A8) and "Low byte addr" (A7-A0), further followed
by the data (D7-D0) to be written. See Figure 9. Note that only A10-
A0 address bits are treated valid by FM25C160U while bits A15-
A11 are ignored.
;;;; FIGURE 9. Byte Write
CS
SI
Write High Addr Low Addr
Opcode
Byte
Byte
Data
SO
High Z
Internally, the programming will start after the /CS pin is brought
back to a high level. Note that the LOW to HIGH transition of the
/CS pin must occur during the SCK low time immediately after
clocking in the D0 data bit. See Figure 10.
FIGURE 10. Start of Programming
/CS
SCK
Start of internal
programming
SI D2
D1
D0
SO
High Z
Programming status (Busy/Ready) of the EEPROM can be deter-
mined by executing a READ STATUS REGISTER (RDSR) in-
struction after a write command. Upon executing the RDSR
instruction, if Bit 0 of the RDSR data is “1”, it indicates the WRITE
cycle is still in progress. If it is “0” then the WRITE cycle has ended.
Note that while the internal programming is still in progress (Bit 0
= 1), only the RDSR instruction is enabled. It is recommended that
no other instruction be issued till the internal programming is
complete.
FM25C160U Rev. B
8
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