FM24CL16 查看數據表（PDF） - Unspecified

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FM24CL16

16Kb FRAM Serial 3V Memory

Unspecified 

3. High noise environments. Writing to EEPROM

in a noisy environment can be challenging. When

severe noise or power fluctuations are present, the

long write time of EEPROM creates a window of

vulnerability during which the write can be corrupted.

The fast write of FRAM is complete within a

microsecond. This time is typically too short for noise

or power fluctuation to disturb it.

4. Time to market. In a complex system, multiple

software routines may need to access the nonvolatile

memory. In this environment the time delay

associated with programming EEPROM adds undue

complexity to the software development. Each

software routine must wait for complete programming

before allowing access to the next routine. When time

to market is critical, FRAM can eliminate this simple

obstacle. As soon as a write is issued to the

FM24CL16, it is effectively done -- no waiting.

5. RF/ID. In the area of contactless memory, FRAM

provides an ideal solution. Since RF/ID memory is

FM24CL16

powered by an RF field, the long programming time

and high current consumption needed to write

EEPROM is unattractive. FRAM provides a superior

solution. The FM24CL16 is suitable for multi-chip

RF/ID products.

6. Maintenance tracking. In sophisticated systems,

the operating history and system state during a failure

is important knowledge. Maintenance can be

expedited when this information has been recorded.

Due to the high write endurance, FRAM makes an

ideal system log. In addition, the convenient 2-wire

interface of the FM24CL16 allows memory to be

distributed throughout the system using minimal

additional resources.

Rev 2.2

July 2003

Page 8 of 13

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