FMMT593 查看數據表（PDF） - Diodes Incorporated.

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FMMT593

100V PNP HIGH VOLTAGE TRANSISTOR IN SOT23

Diodes Incorporated. 

Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Current

Continuous Base Current

Symbol

VCBO

VCEO

VEBO

IC

ICM

IB

Value

-120

-100

-7

-1

-2

-200

FMMT593

Unit

V

V

V

A

A

mA

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Power Dissipation

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Lead

Operating and Storage Temperature Range

(Note 6)

(Note 6)

(Note 7)

Symbol

PD

RϴJA

RϴJL

TJ, TSTG

Value

500

250

197

-55 to +150

Unit

mW

°C/W

°C/W

°C

Notes:

6. For a device surface mounted on 15mm × 15mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

7. Thermal resistance from junction to solder-point (at the end of the collector lead).

FMMT593

Document number: DS33106 Rev. 6 - 2

2 of 7

www.diodes.com

October 2018

© Diodes Incorporated

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