FMMTA06 查看數據表（PDF） - Diodes Incorporated.

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FMMTA06

NPN SILICON PLANARMEDIUM POWER TRANSISTORS

Diodes Incorporated. 

FMMTA0 6

ELECTRICAL CHARACTERISTICS (at Tamb = 25° C unless otherwise stated)

PARAMETER

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector-emitter cut-off current

Collector-base cut-off current

Static forward current transfer ratio

Collector-emitter saturation voltage

Base-emitter turn-on voltage

Transition frequency

SYMBOL

V (BR)CBO

V (BR)CEO

V (BR)EBO

ICES

ICBO

HFE

V CE(sat)

V BE(on)

fT

MIN.

80

80

4

50

50

100

TYP.

120

MAX.

100

100

0.25

1.2

UNIT CONDITIONS

V IC= 1 mA

V IC= 1 0 mA*

V IE= 1 0 0 ␮A

nA V CES= 6 0 V

nA V CB= 8 0 V

IC= 1 0 mA, V CE= 1 V *

IC= 1 0 0 mA, V CE= 1 V *

V IC= 1 0 0 mA, IB= 1 0 mA*

V IC= 0 .1 A, VCE= 1 V*

IC= 1 0 mA, V CE= 2 V ,

f= 1 0 0 MHz

NOTES

* Measured under pulsed conditions. Pulse width= 300␮S. Duty cycle Յ2%

SEMICONDUCTORS

4

ISSUE 2 - MAY 2004

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