FQB10N20C 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FQB10N20C Datasheet PDF : 9 Pages
| |||
Typical Characteristics
Top :
VGS
15.0 V
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.5
1.0
VGS = 10V
VGS = 20V
0.5
※ Note : TJ = 25℃
0.0
0
5
10
15
20
25
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1200
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
Ciss
Coss
600
C
400
rss
200 ※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 40V
10
V = 100V
DS
V = 160V
8
DS
6
4
2
※ Note : ID = 9.5A
0
0
4
8
12
16
20
24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, August 2003
Share Link: 