FQB13N50CTM 查看數據表（PDF） - Fairchild Semiconductor
零件编号
产品描述 (功能)
生产厂家
FQB13N50CTM Datasheet PDF : 9 Pages
| |||
Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
101
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.5
VGS = 10V
1.0
VGS = 20V
0.5
※ Note : TJ = 25℃
0
5
10
15
20
25
30
35
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
3000
2500
2000
1500
1000
500
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2008 Fairchild Semiconductor Corporation
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1.
2.
2V5DS0μ=
40V
s Pulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25G0Sμ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
V = 100V
DS
10
V = 250V
DS
8
VDS = 400V
6
4
2
※ Note : ID = 13A
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, October 2008
Share Link: 