FQI50N06L(2001) 查看數據表（PDF） - Fairchild Semiconductor
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FQI50N06L Datasheet PDF : 9 Pages
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Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = 250 µA
60
--
--
V
ID = 250 µA, Referenced to 25°C -- 0.06
--
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VDS = 48 V, TC = 150°C
--
--
1
µA
--
--
10
µA
IGSSF
IGSSR
Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V
Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V
--
--
100
nA
--
-- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
1.0 --
2.5
V
VGS = 10 V, ID = 26.2 A
VGS = 5 V, ID =26.2 A
-- 0.017 0.021
-- 0.020 0.025
Ω
VDS = 25 V, ID = 26.2 A (Note 4)
--
40
--
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1250 1630 pF
-- 445 580
pF
--
90 120
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 26.2 A,
RG = 25 Ω
-- 20
50
ns
-- 380 770
ns
--
80 170
ns
(Note 4, 5)
--
145
300
ns
VDS = 48 V, ID = 52.4 A,
-- 24.5 32
nC
VGS = 5 V
--
6
--
nC
(Note 4, 5)
--
14.5
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
-- 52.4
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
210
A
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 52.4 A
--
--
1.5
V
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 52.4 A,
-- 65
--
ns
dIF / dt = 100 A/µs
(Note 4)
--
125
--
nC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 300µH, IAS = 52.4A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 52.4A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
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