FQI50N06L(2001) 查看數據表（PDF） - Fairchild Semiconductor
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FQI50N06L Datasheet PDF : 9 Pages
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Typical Characteristics
V
Top : 10.0GVS
102
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
101
100
10-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
60
50
40
V = 5V
GS
30
V = 10V
GS
20
10
※ Note : TJ = 25℃
0
0
25
50
75
100 125 150 175 200
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
4000
3000
C
oss
C
iss
2000
C
1000
rss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
C =C
rss gd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
102
101
175℃
25℃
100
0
2
-55℃
※ Notes :
1.
2.
V25DS0μ=s25PVulse
Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
0.2
175℃
25℃
※ Notes :
1.
2.
2V5GS0μ=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 30V
V = 48V
8
DS
6
4
2
※ Note : ID = 52.4A
0
0
10
20
30
40
50
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
Rev. A1. May 2001
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