FQA8N90C_F109 查看數據表（PDF） - Fairchild Semiconductor
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FQA8N90C_F109 Datasheet PDF : 8 Pages
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Package Marking and Ordering Information
Part Number
FQA8N90C_F109
Top Mark
FQA8N90C
Package
TO-3PN
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 units
Electrical Characteristics TC = 25°C unless otherwise noted.
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
∆BVDSS/
∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
IGSSF
Gate-Body Leakage Current, Forward
IGSSR
Gate-Body Leakage Current, Reverse
On Characteristics
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 4.0 A
VDS = 50 V, ID = 4.0 A
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 450 V, ID = 11.0A,
RG = 25 Ω
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
(Note 4)
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 720 V, ID = 11.0A,
VGS = 10 V
(Note 4)
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 8.0 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 8.0 A,
dIF / dt = 100 A/µs
Min.
900
--
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--
3.0
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Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. L = 25 mH, IAS = 8 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3.ISD ≤ 8 A, di/dt ≤ 200 A/μs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Typ. Max. Unit
--
--
V
0.95
--
V/°C
--
10
µA
--
100
µA
--
100
nA
--
-100 nA
--
5.0
V
1.6
1.9
Ω
5.5
--
S
1600 2080 pF
130 170
pF
12
15
pF
40
90
ns
110 230
ns
70
150
ns
70
150
ns
35
45
nC
10
--
nC
14
--
nC
--
8.0
A
--
32.0
A
--
1.4
V
530
--
ns
5.8
--
µC
©2007 Fairchild Semiconductor Corporation
2
FQA8N90C_F109 Rev C1
www.fairchildsemi.com
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