FQD2N100 查看數據表（PDF） - Fairchild Semiconductor
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FQD2N100 Datasheet PDF : 9 Pages
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Typical Characteristics
Top :
15V.0GSV
10.0 V
8.0 V
7.0 V
6.5 V
100
Bottom :
6.0 V
5.5 V
10-1
10-2
10-1
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
20
15
VGS = 10V
10
5
VGS = 20V
※ Note : TJ = 25℃
0
0
1
2
3
4
ID , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
700
600
500
400
300
200
100
0
10-1
Ciss
Coss
Crss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
100
10-1
2
150℃
25℃
-55℃
※ Notes :
1. VDS = 50V
2. 250µs Pulse Test
4
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃ 25℃
※ Notes :
1. VGS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD , Source-Drain Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
12
VDS = 200V
10
VDS = 500V
8
VDS = 1000V
6
4
2
※ Note : ID = 1.6 A
0
0
2
4
6
8
10
12
14
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2004 Fairchild Semiconductor Corporation
3
FQD2N100 / FQU2N100 Rev. C0
www.fairchildsemi.com
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