FQD3N60C 查看數據表（PDF） - Fairchild Semiconductor
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FQD3N60C Datasheet PDF : 8 Pages
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FQD3N60C
600V N-Channel MOSFET
Features
• 2.4A, 600V, RDS(on) = 3.4Ω @VGS = 10 V
• Low gate charge ( typical 10.5 nC)
• Low Crss ( typical 5 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
January 2006
QFET TM
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficiency switched mode power supplies, active power factor
correction, electronic lamp ballasts based on half bridge
topology.
D
GS
D-PAK
FQD Series
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note 1)
Gate-Source voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation
(TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Characteristics
Symbol
RθJC
RθJA*
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient*
Thermal Resistance, Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
{D
z
G{
z
z
{S
FQD3N60C
600
2.4
1.5
9.6
±30
150
2.4
5.0
4.5
50
0.4
-55 to +150
300
Typ.
--
--
--
Max.
2.5
50
110
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
FQD3N60C REV. A
www.fairchildsemi.com
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