FQD3N60C 查看數據表（PDF） - Fairchild Semiconductor
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FQD3N60C Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
101
Top :
VGS
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
100
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
12
10
8
6
VGS = 10V
4
VGS = 20V
2
※ Note : TJ = 25℃
0
0
1
2
3
4
5
6
7
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
800
700
600
500
400
300
200
100
0
10-1
Coss
Ciss
C = C + C (C = shorted)
iss
gs
gd ds
Coss = Cds + Cgd
Crss = Cgd
Crss
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 2. Transfer Characteristics
101
100
2
150oC
25oC
-55oC
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
VDS = 120V
8
VDS = 300V
VDS = 480V
6
4
2
※ Note : ID = 10A
0
0
2
4
6
8
10
12
QG, Total Gate Charge [nC]
3
600V N-Channel MOSFET REV. A
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