FQD3N60CTM 查看數據表（PDF） - Fairchild Semiconductor
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FQD3N60CTM Datasheet PDF : 8 Pages
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
♦ Notes :
1. VGS = 0 V
2. ID = 250 µA
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
♦ Notes :
1. VGS = 10 V
2. ID = 1.2 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 10. Maximum Drain Current
vs. Case Temperature
101
100
10-1
10-2
100
Operation in This Area
is Limited by R DS(on)
10 µs
100 µs
1 ms
10 ms
DC
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
VDS, Drain-Source Voltage [V]
2.5
2.0
1.5
1.0
0.5
0.0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 11. Transient Thermal Response Curve
D =0.5
100
0 .2
0 .1
0 .0 5
1 0 -1
0 .0 2
0 .0 1
single pulse
※ N otes :
1 . Z θ JC(t) = 2 .5 ℃ /W M a x.
2. D uty F actor, D = t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a ve P u lse D u ra tio n [se c]
4
600V N-Channel MOSFET REV. A
www.fairchildsemi.com
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