FQU3N50CTU 查看數據表（PDF） - Fairchild Semiconductor
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FQU3N50CTU Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Device Marking
FQD3N50C
FQD3N50C
FQU3N50C
Device
FQD3N50CTM
FQD3N50CTF
FQU3N50CTU
Package
D-PAK
D-PAK
I-PAK
Reel Size
380mm
380mm
-
Tape Width
16mm
16mm
-
Quantity
2500
2500
70
Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
500
∆BVDSS/
∆TJ
Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C
--
IDSS
Zero Gate Voltage Drain Current
VDS = 500 V, VGS = 0 V
--
VDS = 400 V, TC = 125°C
--
IGSSF
Gate-Body Leakage Current, Forward
VGS = 30 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -30 V, VDS = 0 V
--
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance
gFS
Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250 µA
2.0
VGS = 10 V, ID = 1.25 A
--
VDS = 40 V, ID = 1.25 A (Note 4)
--
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
VDS = 25 V, VGS = 0 V,
--
f = 1.0 MHz
--
--
td(on)
tr
Turn-On Delay Time
Turn-On Rise Time
VDD = 250 V, ID = 2.5A,
--
RG = 25 Ω
--
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
--
(Note 4, 5)
--
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDS = 400 V, ID = 2.5A,
--
VGS = 10 V
--
(Note 4, 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
ISM
Maximum Pulsed Drain-Source Diode Forward Current
--
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 2.5 A
--
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 3 A,
dIF / dt = 100 A/µs
--
(Note 4)
--
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 58mH, IAS =2.5A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 2.5A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Typ
--
0.7
--
--
--
--
--
2.1
1.5
280
50
8.5
10
25
35
25
10
1.5
5.5
--
--
--
170
0.7
Max Units
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0
V
2.5
Ω
--
S
365
pF
65
pF
11
pF
30
ns
60
ns
80
ns
60
ns
13
nC
--
nC
--
nC
2.5
A
10
A
1.4
V
--
ns
--
µC
2
FQD3N50C / FQU3N50C Rev. B
www.fairchildsemi.com
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