FQD1N60C(2003) 查看數據表（PDF） - Fairchild Semiconductor
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FQD1N60C Datasheet PDF : 9 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
IVDG=S =2500Vμ
A
0.8
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 7. Breakdown Voltage Variation
vs Temperature
101
100
10-1
10-2
100
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
100 ms
DC
※ Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 0.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs Temperature
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
T , Case Temperature [℃]
C
Figure 10. Maximum Drain Current
vs Case Temperature
D =0.5
100
0 .2
0 .1
0 .0 5
1 0-1
0 .0 2
0 .0 1
sin g le p u lse
※ N ote s :
1 . Z θ JC(t) = 4 .53 ℃ /W M ax .
2 . D u ty F a c to r, D = t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0-5
1 0 -4
1 0 -3
1 0 -2
1 0-1
100
101
t , S q ua re W a ve P ulse D uration [se c]
1
Figure 11. Transient Thermal Response Curve
©2003 Fairchild Semiconductor Corporation
Rev. A, November 2003
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