FQP5N20L 查看數據表（PDF） - Fairchild Semiconductor
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FQP5N20L Datasheet PDF : 8 Pages
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Typical Characteristics
101 Top :
V
GS
10 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
8
6
V = 5V
GS
V = 10V
4
GS
2
※ Note : T = 25℃
J
0
0
2
4
6
8
10
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
500
400
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
300
C
iss
200
100
0
10-1
C
※ Notes :
oss
1. VGS = 0 V
2. f = 1 MHz
C
rss
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
101
150℃
100
25℃
10-1
0
-55℃
※ Notes :
1. VDS = 30V
2. 250μ s Pulse Test
2
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 40V
8
V = 100V
DS
V = 160V
DS
6
4
2
※ Note : ID = 4.5 A
0
0
2
4
6
8
10
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A1, August 2001
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