FQP6N80C(2003) 查看數據表（PDF） - Fairchild Semiconductor
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FQP6N80C Datasheet PDF : 10 Pages
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Typical Characteristics
VGS
Top : 15.0 V
101
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-2
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
6
5
V = 10V
GS
4
3
V = 20V
GS
2
※ Note : TJ = 25℃
1
0
3
6
9
12
I , Drain Current [A]
D
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1500
1200
Ciss
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
900
600
300
0
10-1
C
oss
C
rss
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
101
100
10-1
2
150oC
25oC
-55oC
※ Notes :
1. VDS = 50V
2. 250μ s Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
GS
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 160V
10
VDS = 400V
V = 640V
DS
8
6
4
2
※ Note : ID = 6.0A
0
0
5
10
15
20
25
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, June 2003
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