FQP7N65C 查看數據表（PDF） - Fairchild Semiconductor
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FQP7N65C Datasheet PDF : 10 Pages
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Typical Characteristics
Top : 15V.0GSV
10.0 V
8.0 V
7.0 V
101
6.0 V
5.5 V
Bottom : 5.0 V
100
※ Notes :
1. 250µs Pulse Test
2. TC = 25℃
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
3.0
2.5
VGS = 10V
2.0
1.5
1.0
0
VGS = 20V
5
10
ID, Drain Current [A]
※Note: TJ =25℃
15
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
2000
1600
1200
800
400
0
10-1
Ciss
Coss
Crss
CCCiorssssss===CCCggdsds++CCggdd(Cds = shorted)
※ Note ;
1.
2.
Vf =GS1=M0HVz
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2004 Fairchild Semiconductor Corporation
101
150oC
100
25oC
-55oC
※ Notes :
1.
2.
2V5DS0µ=s40PVulse
Test
10-1
2
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃
25℃
※ Notes :
1.
2.
V25GS0µ=s0VPulse
Test
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
10
VDS = 130V
VDS = 325V
8
VDS = 520V
6
4
2
※ Note : ID = 7A
0
0
4
8
12
16
20
24
28
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, May 2004
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