FQT4N25(2001) 查看數據表（PDF） - Fairchild Semiconductor
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FQT4N25 Datasheet PDF : 8 Pages
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Typical Characteristics
VGS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
100
6.0 V
Bottom : 5.5 V
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
8
6
VGS = 10V
V = 20V
4
GS
2
※ Note : T = 25℃
J
0
0
2
4
6
8
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
350
300
250
200
150
100
50
0
10-1
C = C + C (C = shorted)
iss gs gd ds
Coss = Cds + Cgd
Crss = Cgd
C
iss
C
oss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
C
rss
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
©2001 Fairchild Semiconductor Corporation
100
10-1
2
150℃
25℃
-55℃
※ Notes :
1. V = 50V
2. 25DS0μ s Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
100
10-1
0.2
150℃
25℃
※ Notes :
1. V = 0V
2. 25G0Sμ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 50V
DS
10
V = 125V
DS
V = 200V
DS
8
6
4
2
※ Note : ID = 3.6 A
0
0
1
2
3
4
5
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, May 2001
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