FQT4N25(2001) 查看數據表（PDF） - Fairchild Semiconductor
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FQT4N25 Datasheet PDF : 8 Pages
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
VGS
I=
=0V
250 μ
A
D
0.8
-100
-50
0
50
100
150
200
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
101
Operation in This Area
is Limited by R DS(on)
100 µs
100
1 ms
10 ms
100 ms
DC
10-1
10-2
10-3
10-1
※ Notes :
1. T = 25 oC
C
2. TJ = 150 oC
3. Single Pulse
100
101
102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Notes :
1. VGS = 10 V
2. ID = 0.415 A
-50
0
50
100
150
200
T , Junction Temperature [oC]
J
Figure 8. On-Resistance Variation
vs. Temperature
1.0
0.8
0.6
0.4
0.2
0.0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
D =0 .5
101
0 .2
0 .1
0 .0 5
100 0.02
0 .0 1
s in gle pu ls e
※ N otes :
1 . Z θ J C(t) = 5 0 ℃ /W M a x .
2. D u ty F ac to r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -1
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
102
103
t1, S quare W ave P ulse D uration [sec]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
Rev. A, May 2001
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