FQP6N40CF(2006) 查看數據表（PDF） - Fairchild Semiconductor
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FQP6N40CF Datasheet PDF : 10 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
Top :
15V.0GSV
10.0 V
101
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
100
10-1
10-1
※ Notes :
1. 250µ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
VGS = 10V
VGS = 20V
※ Note : TJ = 25℃
5
10
15
20
ID, Drain Current [A]
Figure 2. Transfer Characteristics
101
150oC
25oC
100
-55oC
10-1
2
※ Notes :
1. VDS = 40V
2. 250µ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
101
100
10-1
0.2
150℃
25℃
※ Notes :
1. VGS = 0V
2. 250µ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 5. Capacitance Characteristics
1200
1000
800
600
400
200
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Ciss
Coss
Crss
※ Note ;
1. VGS = 0 V
2. f = 1 MHz
100
101
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
12
VDS = 80V
10
VDS = 200V
8
VDS = 320V
6
4
2
※ Note : ID = 6A
0
0
5
10
15
20
QG, Total Gate Charge [nC]
3
FQP6N40CF/FQPF6N40CF Rev. B
www.fairchildsemi.com
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