FS10SM-18A 查看數據表（PDF） - Mitsumi
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FS10SM-18A Datasheet PDF : 4 Pages
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MITSUBISHI Nch POWER MOSFET
FS10SM-18A
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS (Tch = 25°C)
Symbol
Parameter
Test conditions
V (BR) DSS
V (BR) GSS
IGSS
IDSS
VGS (th)
rDS (ON)
VDS (ON)
yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
VSD
Rth (ch-c)
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
ID = 1mA, VGS = 0V
IGS = ±100µA, VDS = 0V
VGS = ±25V, VDS = 0V
VDS = 900V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 5A, VGS = 10V
ID = 5A, VGS = 10V
ID = 5A, VDS = 10V
VDS = 25V, VGS = 0V, f = 1MHz
VDD = 200V, ID = 5A, VGS = 10V,
RGEN = RGS = 50Ω
IS = 5A, VGS = 0V
Channel to case
Limits
Unit
Min.
Typ. Max.
900
—
—
V
±30
—
—
V
—
—
±10
µA
—
—
1
mA
2
3
4
V
—
0.93
1.20
Ω
—
4.65
6.00
V
6.0
10.0
—
S
—
2250
—
pF
—
230
—
pF
—
42
—
pF
—
38
—
ns
—
46
—
ns
—
260
—
ns
—
75
—
ns
—
1.0
1.5
V
—
—
0.625 °C/W
PERFORMANCE CURVES
POWER DISSIPATION DERATING CURVE
200
160
120
80
40
0
0
50
100
150
200
CASE TEMPERATURE TC (°C)
OUTPUT CHARACTERISTICS
(TYPICAL)
20
Tch = 25°C
Pulse Test
16
VGS = 20V
10V
12
PD = 200W
8
5V
4
4V
0
0
10 20 30 40 50
DRAIN-SOURCE VOLTAGE VDS (V)
MAXIMUM SAFE OPERATING AREA
102
7
5
3
2
tw = 10ms
101
7
100ms
5
3
2
1ms
100
7
5 TC = 25°C
3 Single Pulse
2
10ms
100ms
DC
10–1
3
5 7 101 2 3
5 7 102 2 3
5 7 103 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
10
VGS = 20V
10V
TC = 25°C
Pulse Test
8
5V
6
4
4.5V
2
4V
0
0
4
8
12 16 20
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
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