FS30VSJ-3-T11 查看數據表（PDF） - Renesas Electronics

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FS30VSJ-3-T11

High-Speed Switching Use Nch Power MOS FET

Renesas Electronics 

FS30VSJ-3

Electrical Characteristics

Parameter

Drain-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Reverse recovery time

(Tch = 25°C)

Symbol Min Typ Max Unit

Test Conditions

V(BR)DSS

IGSS

IDSS

VGS(th)

rDS(ON)

rDS(ON)

VDS(ON)

| yfs |

Ciss

Coss

150

—

—

—

—

±0.1

—

—

0.1

1.0

1.5

2.0

—

66

86

—

69

90

—

0.99 1.29

—

38

—

—

3000

—

—

320

—

V

ID = 1 mA, VGS = 0 V

µA VGS = ±20 V, VDS = 0 V

mA VDS = 150 V, VGS = 0 V

V

ID = 1 mA, VDS = 10 V

mΩ ID = 15 A, VGS = 10 V

mΩ ID = 15 A, VGS = 4 V

V

ID = 15 A, VGS = 10 V

S

ID = 15 A, VDS = 10 V

pF VDS = 10 V, VGS = 0 V,

pF f = 1MHz

Crss

—

160

—

pF

td(on)

—

22

—

ns VDD = 80 V, ID = 15 A,

tr

td(off)

—

42

—

—

280

—

ns VGS = 10 V,

ns

RGEN = RGS = 50 Ω

tf

—

130

—

ns

VSD

—

1.0

1.5

V

IS = 15 A, VGS = 0 V

Rth(ch-c)

—

—

1.78 °C/W Channel to case

trr

—

100

—

ns IS = 30 A, dis/dt = –100 A/µs

Rev.2.00 Aug 07, 2006 page 2 of 6

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