FS50KMJ-2 查看數據表（PDF） - Renesas Electronics
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FS50KMJ-2 Datasheet PDF : 7 Pages
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FS50KMJ-2
Transfer Characteristics (Typical)
100
Tc = 25°C
VDS = 10V
80
Pulse Test
60
40
20
0
0
2
4
6
8
10
Gate-Source Voltage VGS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
2
Tch = 25°C
104 f = 1MHz
7
5
VGS = 0V
3
Ciss
2
103
7
5
3
Coss
2
Crss
102
7
5
3
2
3
5 7100
23
5 7 101
23
5 7 102
23
Drain-Source Voltage VDS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
10
Tch = 25°C
ID = 50A
8
6
4
VDS = 20V
40V
80V
2
0
0
20 40 60 80 100
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
102
7 VDS = 10V
5 Pulse Test
4
3
2
101
7
5
4
3
2
TC = 25°C
75°C
125°C
100100 2 3 4 5 7 101 2 3 4 5 7 102
Drain Current ID (A)
Switching Characteristics (Typical)
103
7
5
4
td(off)
Tch = 25°C
VDD = 50V
VGS = 10V
RGEN = RGS = 50Ω
3
2
tf
102
7
5
4
tr
3
2
td(on)
101100 2 3 4 5 7 101 2 3 4 5 7 102
Drain Current ID (A)
Source-Drain Diode Forward
Characteristics (Typical)
100
VGS = 0V
Pulse Test
80
60
40
Tc = 125°C
20
75°C
25°C
0
0
0.4 0.8 1.2 1.6 2.0
Source-Drain Voltage VSD (V)
Rev.2.00 Aug 07, 2006 page 4 of 6
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