FSEZ1317NY 查看數據表（PDF） - Fairchild Semiconductor

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FSEZ1317NY

(EZ-PSR for 2-Chip Product) Primary-Side-Regulation PWM with POWER MOSFET Integrated

Fairchild Semiconductor 

Electrical Characteristics (Continued)

Unless otherwise specified, VDD=15V and TA=25℃.

Symbol

Internal MOSFET Section(3)

Parameter

Conditions Min. Typ. Max. Units

DCYMAX

BVDSS

Maximum Duty Cycle

Drain-Source Breakdown Voltage

ID=250μA,

VGS=0V

70 75 80

%

700

V

∆BVDSS/∆TJ Breakdown Voltage Temperature Coefficient

ID=250μA,

Referenced to

TA=25°C

0.53

V/°C

RDS(ON) Static Drain-Source On-Resistance

ID=0.5A,

VGS=10V

13 16

Ω

Maximum Continuous Drain-Source Diode Forward

IS

Current

1

A

IDSS

Drain-Source Leakage Current

VDS=700V,

TA=25°C

VDS=560V,

TA=100°C

10

µA

100 µA

tD-ON

tD-OFF

Turn-On Delay Time

Turn-Off Delay Time

VDS=350V,

ID=1A,

RG=25Ω(4)

10 30

ns

20 50

ns

CISS

Input Capacitance

VGS=0V,

VDS=25V,

fS=1MHz

175 200 pF

COSS

Output Capacitance

23 25

pF

Over-Temperature-Protection Section

TOTP

Threshold Temperature for OTP(5)

+140

°C

Notes:

3. These parameters, although guaranteed, are not 100% tested in production.

4. Pulse test: pulsewidth ≦ 300µs, duty cycle ≦ 2%.

5. When the Over-temperature protection is activated, the power system enter latch mode and output is disabled.

© 2009 Fairchild Semiconductor Corporation

FSEZ1317 • Rev. 1.0.4

6

www.fairchildsemi.com

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