FSR1110D 查看數據表（PDF） - Intersil
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FSR1110D Datasheet PDF : 9 Pages
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FSR1110D, FSR1110R
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Recovery Time
VSD
trr
ISD = 1.0A
ISD = 1.0A, dISD/dt = 100A/µs
MIN
TYP
MAX
UNITS
0.6
-
1.8
V
-
-
110
ns
Electrical Specifications up to 100K RAD TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
Drain to Source Breakdown Volts
(Note 3)
BVDSS VGS = 0, ID = 1mA
100
Gate to Source Threshold Volts
(Note 3)
VGS(TH) VGS = VDS, ID = 1mA
1.5
Gate to Body Leakage
(Notes 2, 3)
IGSS
VGS = ±20V, VDS = 0V
-
Zero Gate Leakage
(Note 3)
IDSS
VGS = 0, VDS = 80V
-
Drain to Source On-State Volts
(Notes 1, 3)
VDS(ON) VGS = 12V, ID = 1.0A
-
Drain to Source On Resistance
(Notes 1, 3)
rDS(ON)12 VGS = 12V, ID = 0.6A
-
NOTES:
1. Pulse test, 300µs Max.
2. Absolute value.
3. Insitu Gamma bias must be sampled for both VGS = 12V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS.
MAX
-
4.0
100
25
0.710
0.680
UNITS
V
V
nA
µA
V
Ω
Single Event Effects (SEB, SEGR) Note 4
TEST
Single Event Effects Safe Operating Area
SYMBOL
SEESOA
ENVIRONMENT (NOTE 5)
ION
SPECIES
TYPICAL LET
(MeV/mg/cm)
TYPICAL
RANGE (µ)
Ni
28
43
APPLIED
VGS BIAS
(V)
-20
(NOTE 6)
MAXIMUM
VDS BIAS (V)
100
Br
37
36
-10
100
Br
37
36
-15
80
Br
37
36
-20
50
NOTES:
4. Testing conducted at Brookhaven National Labs; sponsored by Naval Surface Warfare Center (NSWC), Crane, IN.
5. Fluence = 1E5 ions/cm2 (typical), T = 25oC.
6. Does not exhibit Single Event Burnout (SEB) or Single Event Gate Rupture (SEGR).
3
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