FX50SMJ-03
Electrical Characteristics
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Symbol
V(BR)DSS
IGSS
IDSS
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
trr
Min.
–30
—
—
–1.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
–1.8
28
54
–0.70
23
4270
695
342
21
103
223
122
–1.0
—
55
Max.
—
±0.1
–0.1
–2.3
35
72
–0.88
—
—
—
—
—
—
—
—
–1.5
1.79
—
Unit
V
µA
mA
V
mΩ
mΩ
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
(Tch = 25°C)
Test conditions
ID = 1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = –30 V, VGS = 0 V
ID = –1 mA, VDS = –10 V
ID = – 25 A, VGS = –10 V
ID = – 9 A, VGS = – 4 V
ID = – 25 A, VGS = –10 V
ID = – 25 A, VDS = –10 V
VDS = –10 V, VGS = 0 V,
f = 1MHz
VDD = –15 V, ID = – 25 A,
VGS = –10 V,
RGEN = RGS = 50 Ω
IS = – 25 A, VGS = 0 V
Channel to case
IS = – 25 A, dis/dt = 50 A/µs
Rev.1.00, Aug.20.2004, page 2 of 6