FX50SMJ-03 查看數據表（PDF） - Renesas Electronics
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FX50SMJ-03 Datasheet PDF : 7 Pages
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FX50SMJ-03
Transfer Characteristics (Typical)
–100
Tc = 25°C
VDS = –10V
– 80 Pulse Test
– 60
– 40
– 20
0
0
– 2 – 4 – 6 – 8 –10
Gate-Source Voltage VGS (V)
Capacitance vs.
Drain-Source Voltage (Typical)
104
7
5
Ciss
4
3
2
103
7
5
4
3
Tch = 25°C
2 f = 1MHz
VGS = 0V
102
–3
–5 –7–100
–2 –3
Coss
Crss
–5 –7–101 –2 –3
Drain-Source Voltage VDS (V)
Gate-Source Voltage vs.
Gate Charge (Typical)
–10
Tch = 25°C
ID = – 50A
–8
–6
VDS = –10V
– 20V
–4
– 25V
–2
0
0
20 40 60 80 100
Gate Charge Qg (nC)
Forward Transfer Admittance vs.
Drain Current (Typical)
102
7 VDS = –10V
5 Pulse Test
4
3
Tc = 25°C
75°C 125°C
2
101
7
5
4
3
2
10–0100 –2 –3 –5 –7–101 –2 –3 –5 –7–102
Drain Current ID (A)
Switching Characteristics (Typical)
103 Tch = 25°C
7 VGS = –10V
5 VDD = –15V
4 RGEN = RGS = 50Ω
3
2
tf
102
7
tr
5
4
3
2
td(off)
td(on)
101
–100 –2 –3 –5 –7–101 –2 –3 –5 –7 –102
Drain Current ID (A)
Source-Drain Diode Forward
Characteristics (Typical)
–100
– 80
VGS = 0V
Pulse Test
– 60
– 40
Tc = 25°C
75°C
– 20
125°C
0
0 – 0.4 – 0.8 –1.2 –1.6 –2.0
Source-Drain Voltage VSD (V)
Rev.1.00, Aug.20.2004, page 4 of 6
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