GBPC601-E4/51 查看數據表（PDF） - Vishay Semiconductors
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GBPC601-E4/51 Datasheet PDF : 4 Pages
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GBPC6005 thru GBPC610
Vishay General Semiconductor
100
1000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
1
100
0.1
0.01
0.4
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Figure 3. Typical Forward Characteristics Per Diode
50 - 400 V
600 - 1000 V
10
0.1
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
1000
100
TA = 125 °C
100
10
TJ = 100 °C
10
1
TJ = 25 °C
0.1
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
1
0.1
0.01
0.1
1
10
100
t - Heating Time (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style GBPC6
Hole For #6 Screw
0.158
0.142
(4.01)
(3.61)
DIA.
0.630 (16.00)
0.590 (14.98)
0.445 (11.30)
0.405 (10.29)
0.630 (16.00)
0.590 (14.98)
0.128 (3.25)
0.048 (1.22)
0.042
0.038
(1.07)
(0.96)
DIA.
AC
0.445 (11.30)
0.405 (10.29)
AC
0.094 (2.4) x 45°
0.040 (1.02) TYP.
0.750 (19.05)
MIN.
0.200 (5.08)
0.160 (4.06)
Polarity shown on side of case: Positive lead by beveled corner
Document Number: 88613 For technical questions within your region, please contact one of the following:
Revision: 15-Apr-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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