GC4220(2009) 查看數據表（PDF） - Microsemi Corporation
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GC4220 Datasheet PDF : 4 Pages
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GC4210 – GC4275
TM
®
CONTROL DEVICES – HIGH SPEED PIN DIODES
RoHS Compliant
.
DEVICE ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)E
Model Number 1
Vb(V)
IR=10μA
Cj (pF) 2
@VR=10V
Rs(Ω) 3
@20 mA
TL(nS)
IR=6mA/IF=10mA
Thermal
Resistance
θ (˚C/W)
(Min)
(Max)
(Max)
(Typ)
(Max)
GC4270
70
0.06
1.5
100
80
GC4271
70
0.10
1.0
100
70
GC4272
70
0.20
0.8
100
70
GC4273
70
0.30
0.7
100
60
GC4274
70
0.40
0.6
100
50
GC4275
70
0.50
0.5
100
40
GC4210
100
0.06
1.5
200
80
GC4211
100
0.10
1.0
200
70
GC4212
100
0.20
0.75
200
70
GC4213
100
0.30
0.6
200
60
GC4214
100
0.40
0.5
200
50
GC4215
100
0.50
0.35
200
40
GC4220
250
0.06
2.5
500
80
GC4221
250
0.10
2.0
500
70
GC4222
250
0.20
1.5
500
70
GC4223
250
0.30
1.0
500
60
GC4224
250
0.40
0.8
500
50
GC4225
250
0.50
0.6
500
40
Notes:
1. This series of devices is available in standard case styles 00, 30, and 35. Many other styles are available on request.
2. Capacitance is measured at 1 MHz.
3. Resistance is measured AT 1 GHz using transmission loss techniques.
The junction capacitance specified is for a 00 (chip) package style. Standard wafer evaluation and
characterization is completed using a style 30 package. Diodes are available in many case styles.
Each type offers performance trade-offs. The proper choice of package style depends on the end
application and operating environment. Consult factory for assistance. Reverse polarity diodes
(NIP) and higher voltage PIN and NIP diodes are also available. (See data sheets for GC4300,
GC4400, and GC4500 series respectively.)
Copyright 2006
Rev.: 2009-02-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
Page 2
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