GJ01N60 查看數據表（PDF） - GTM CORPORATION
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GJ01N60 Datasheet PDF : 5 Pages
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ISSUED DATE :2004/06/01
REVISED DATE :2005/01/28B
Electrical Characteristics (Tj = 25 unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Drain-Source Breakdown Voltage
BVDSS 600
-
-
V VGS=0, ID=250uA
Breakdown Voltage Temperature Coefficient BVDSS / Tj
-
0.6
-
V/ Reference to 25 , ID=1mA
Gate Threshold Voltage
Forward Transconductance
VGS(th) 2.0
-
4.0
gfs
-
0.8
-
V VDS=VGS, ID=250uA
S VDS=50V, ID=0.8A
Gate-Source Leakage Current
IGSS
-
- ±100 nA VGS= ±20V
Drain-Source Leakage Current(Tj=25 )
-
-
100 uA VDS=600V, VGS=0
IDSS
Drain-Source Leakage Current(Tj=150 )
-
-
500 uA VDS=480V, VGS=0
Static Drain-Source On-Resistance RDS(ON) -
Total Gate Charge3
Qg
-
Gate-Source Charge
Qgs
-
Gate-Drain (“Miller”) Change
Turn-on Delay Time3
Qgd
-
Td(on)
-
Rise Time
Tr
-
Turn-off Delay Time
Td(off)
-
Fall Time
Tf
-
Input Capacitance
Ciss
-
Output Capacitance
Coss
-
Reverse Transfer Capacitance
Crss
-
7.2 8.0
7.7
-
1.5
-
2.6
-
8
-
5
-
14
-
7
-
286
-
25
-
5
-
VGS=10V, ID=0.8A
ID=1.6A
nC VDS=480V
VGS=10V
VDD=300V
ID=1.6A
ns VGS=10V
RG=10
RD=187.5
VGS=0V
pF VDS=25V
f=1.0MHz
Source-Drain Diode
Parameter
Forward On Voltage3
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)1
Symbol
VSD
IS
ISM
Min.
-
-
-
Typ.
-
-
-
Max.
1.5
1.6
6
Unit
Test Conditions
V IS=1.6A, VGS=0V, Tj=25
A VD= VG=0V, VS=1.5V
A
Notes: 1. Pulse width limited by safe operating area.
2. Staring Tj=25 , VDD=50V, L=10mH, RG=25 , IAS=1.6A.
3. Pulse width 300us, duty cycle 2%.
GJ01N60
Page: 2/5
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