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AMP01NBS 查看數據表(PDF) - Analog Devices

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AMP01NBS Datasheet PDF : 22 Pages
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AMP01
WAFER TEST LIMITS (@ VS = ؎15 V, RS = 10 k, RL = 2 k, TA = +25؇C, unless otherwise noted)
Parameter
Symbol Conditions
AMP01NBC
Limit
AMP01GBC
Limit
Units
Input Offset Voltage
VIOS
60
Output Offset Voltage
VOOS
4
Offset Referred to Input
PSR V+ = +5 V to +15 V
vs. Positive Supply
G = 1000
120
G = 100
110
G = 10
95
G=1
75
Offset Referred to Input
PSR V– = –5 V to –15 V
vs. Negative Supply
G = 1000
105
G = 100
90
G = 10
70
G=1
50
Input Bias Current
Input Offset Current
Input Voltage Range
IB
4
IOS
1
IVR Guaranteed by CMR Tests
± 10
Common Mode Rejection
CMR VCM = ± 10 V
G = 1000
125
G = 100
120
G = 10
100
G=1
85
120
µV max
8
mV max
dB min
110
dB min
100
dB min
90
dB min
70
dB min
dB min
105
dB min
90
dB min
70
dB min
50
dB min
8
nA max
3
nA max
± 10
V min
dB min
115
dB min
110
dB min
95
dB min
75
dB min
Gain Equation Accuracy
Output Voltage Swing
Output Current Limit
Output Current Limit
Quiescent Current
VOUT
VOUT
VOUT
IQ
G=
20 × RS
RG
RL = 2 k
RL = 500
RL = 50
Output to Ground Short
Output to Ground Short
+V Linked to +VOP
–V Linked to –VOP
0.6
± 13
± 13
± 2.5
± 60
± 120
4.8
4.8
0.8
± 13
± 13
± 2.5
± 60
± 120
4.8
4.8
% max
V min
V min
V min
mA min
mA max
mA max
mA max
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
250
–IN
250
+IN
REFERENCE
R1
47.5k
A2
VIOS
NULL
Q1
Q2
RGAIN
RSCALE
V+
+VOP
A1
OUTPUT
–VOP
R3
47.5k
SENSE
A3
R2
2.5k
VOOS
NULL
R4
2.5k
V–
Figure 1. Simplified Schematic
CAUTION
ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily
accumulate on the human body and test equipment and can discharge without detection.
Although the AMP01 features proprietary ESD protection circuitry, permanent damage may
occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD
precautions are recommended to avoid performance degradation or loss of functionality.
–6–
WARNING!
ESD SENSITIVE DEVICE
REV. D

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