AMP01NBS 查看數據表（PDF） - Analog Devices
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AMP01NBS Datasheet PDF : 22 Pages
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AMP01
ELECTRICAL CHARACTERISTICS (@ VS = ؎15 V, RS = 10 k⍀, RL = 2 k⍀, TA = +25؇C, unless otherwise noted)
Parameter
Symbol Conditions
AMP01NBC
Typical
AMP01GBC
Typical
Units
Input Offset Voltage Drift
Output Offset Voltage Drift
Input Bias Current Drift
Input Offset Current Drift
Nonlinearity
Voltage Noise Density
TCVIOS
TCVOOS
TCIB
TCIOS
en
Current Noise Density
in
Voltage Noise
en p-p
Current Noise
in p-p
Small-Signal Bandwidth (–3 dB) BW
Slew Rate
SR
Settling Time
tS
RG = ∞
G = 1000
G = 1000
fO = 1 kHz
G = 1000
fO = 1 kHz
G = 1000
0.1 Hz to 10 Hz
G = 1000
0.1 Hz to 10 Hz
G = 1000
G = 10
To 0.01%, 20 V Step
G = 1000
0.15
20
40
3
0.0007
5
0.15
0.12
2
26
4.5
50
0.30
50
50
5
0.0007
5
0.15
0.12
2
26
4.5
50
µV/°C
µV/°C
pA/°C
pA/°C
%
nV/√Hz
pA/√Hz
µV p-p
pA p-p
kHz
V/µs
µs
NOTE
Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing.
REV. D
–7–
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