GM71CS17403CJ 查看數據表（PDF） - Hynix Semiconductor

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GM71CS17403CJ

4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM

Hynix Semiconductor 

GM71C(S)17403C/CL

EDO Page Mode Cycle

Symbol

Parameter

tHPC

tRASP

tACP

tRHCP

tDOH

tCOL

tCOP

tRCHP

EDO Page Mode Cycle Time

EDO Page Mode RAS Pulse Width

Access Time from CAS Precharge

RAS Hold Time from CAS Precharge

Output data Hold Time from CAS low

CAS Hold Time referred OE

CAS to OE Setup Time

Read command Hold Time

from CAS Precharge

GM71C(S)17403 GM71C(S)17403 GM71C(S)17403

C/CL-5

C/CL-6

C/CL-7

Unit

Min Max Min Max Min Max

Note

20 - 25 - 30 -

ns

20

- 100,000 - 100,000 - 100,000 ns

16

- 30 - 35 - 40 ns 9,17,19

30 - 35 - 40 -

ns

3-

3-

3

ns

9

7 - 10 - 13

ns

5-

5-

5

ns

30 - 35 - 40

ns

EDO Page Mode Read-Modify-Write Cycle

Symbol

Parameter

GM71C(S)17403 GM71C(S)17403

C/CL-5

C/CL-6

Min Max Min Max

GM71C(S)17403

C/CL-7

Min Max

Unit

tHPRWC EDO Page Mode Read-Modify-Write

Cycle Time

57 - 68 - 79 -

ns

tCPW

WE Delay Time from CAS Precharge

45 - 54 - 62 -

ns

Note

14

Refresh

Symbol

Parameter

tREF

Refresh period

tREF

Refresh period (L -Series)

GM71C(S)17403 GM71C(S)17403 GM71C(S)17403

C/CL-5

C/CL-6

C/CL-7

Min Max Min Max Min Max

Unit

- 32 - 32 - 32 ms

- 128 - 128 - 128 ms

Note

2048

cycles

2048

cycles

Test Mode Cycle ∗19

Symbol

Parameter

tWTS

Test Mode WE Setup Time

tWTH

Test Mode WE Hold Time

GM71C(S)17403 GM71C(S)17403 GM71C(S)17403

C/CL-5

C/CL-6

C/CL-7

Min Max Min Max Min Max

Unit

0 - 0 - 0 - ns

10 - 10 - 10 - ns

Note

Rev 0.1 / Apr’01

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